2SD2675(RevA) 데이터 시트보기 (PDF) - ROHM Semiconductor
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2SD2675 Datasheet PDF : 3 Pages
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Transistors
2SD2675
General purpose amplification (30V, 1A)
2SD2675
zApplication
Low frequency amplifier
zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
VCE(sat) ≦ 350mV
At IC = 500mA / IB = 25mA
zExternal dimensions (Units : mm)
2.8
1.6
0.3 ~0.6
Each lead has same dimensions
ROHM : TSMT3 Abbreviated symbol : EU
(1) Base
(2) Emitter
(3) Collector
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction temperature
Tj
Range of storage temperature Tstg
∗1Single pulse, PW=1ms
∗2Mounted on a 25×25× t 0.8mm Ceramic substrate
Limits
30
30
6
1
2
500
1 ∗2
150
−55 to +150
Unit
V
V
V
A
A ∗1
mW
W
°C
°C
zPackaging specifications
Type
Package
Code
Basic ordering unit (pieces)
2SD2675
Taping
TL
3000
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 30 − − V IC=10µA
Collector-emitter breakdown voltage BVCEO 30 − − V IC=1mA
Emitter-base breakdown voltage
BVEBO 6
−−
V IE=10µA
Collector cutoff current
ICBO
−
− 100 nA VCB=30V
Emitter cutoff current
IEBO
−
− 100 nA VEB=6V
Collector-emitter saturation voltage
DC current gain
Transition frequency
VCE(sat) − 120 350 mV IC/IB=500mA/25mA
hFE 270 − 680 − VCE/IC=2V/100mA
∗
fT
− 320 − MHz VCE=2V, IE=−100mA, f=100MHz ∗
Corrector output capacitance
Cob
−
7 − pF VCB=10V, IE=0A, f=1MHz
∗ Pulsed
Rev.A
1/2
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