2SD2671(2016) 데이터 시트보기 (PDF) - ROHM Semiconductor
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2SD2671 Datasheet PDF : 9 Pages
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2SD2671
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Datasheet
Symbol
Values
Unit
VCBO
30
V
VCEO
30
V
VEBO
6
V
IC
2
A
ICP*1
4
A
PD*2
0.5
W
PD*3
1.0
W
Tj
150
℃
Tstg
-55 to +150
℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Collector-base breakdown
voltage
BVCBO IC = 10μA
30 -
-
V
Collector-emitter breakdown
voltage
BVCEO IC = 1mA
30 -
-
V
Emitter-base breakdown voltage BVEBO IE = 10μA
Collector cut-off current
ICBO VCB = 30V
Emitter cut-off current
IEBO VEB = 6V
Collector-emitter saturation voltage VCE(sat)*4 IC = 1.5A, IB = 75mA
DC current gain
hFE VCE = 2V, IC = 200mA
6
-
-
V
-
- 100 nA
-
- 100 nA
- 180 370 mV
270 - 680 -
Transition frequency
fT
VCE = 2V, IE = -200mA,
f = 100MHz
-
280
-
MHz
Output capacitance
Cob
VCB = 10V, IE = 0A,
f = 1MHz
*1 Pw=1ms Single Pulse
*2 Each terminal mounted on a reference land.
*3 Mounted on a ceramic board(25×25×0.8 mm).
*4 Pulsed
-
20
-
pF
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