2SD2661(RevA) 데이터 시트보기 (PDF) - ROHM Semiconductor

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2SD2661
(Rev.:RevA)

Low frequency amplifier transistor(12V, 2A)

ROHM Semiconductor 

Transistors

zElectrical characteristic curves

10

VCE=2V

Pulsed

1

Ta=100°C

0.1

0.01

Ta=25°C

Ta=−40°C

0.001

0

0.5

1

1.5

BASE TO EMITTER CURRENT : VBE (V)

Fig.1 Grounded emitter propagation

characteristics

1000

Ta=100°C

Ta=25°C

Ta=−40°C

100

VCE=2V

Pulsed

10

0.001

0.01

0.1

1

10

COLLECTOR CURRENT : IC (A)

Fig.2 DC current gain

vs. collector current

2SD2661

1

Ta=25°C

Pulsed

0.1

IC/IB=50

0.01

IC/IB=20

IC/IB=10

0.001

0.001

0.01

0.1

1

10

COLLECTOR CURRENT : IC (A)

Fig.3 Collector-emitter saturation voltage

vs. collector current

1

IC/IB=20

Pulsed

1000

Ta=25°C

0.1

Ta=100°C

Ta=−40°C

100

0.01

1000

Ta=25°C

VCE=2V

f=100MHz

100

10

Ta=25˚C

IE=0A

f=1MHz

Cib

Cob

0.001

0.001

0.01

0.1

1

10

COLLECTOR CURRENT : IC (A)

Fig.4 Base-emitter saturation voltage

vs. collector current

10

−0.001 −0.01

−0.1

−1

−10

EMITTER CURRENT : IE (A)

Fig.5 Gain bandwidth product

vs. emitter current

1

0.1

1

10

100

EMITTER TO BASE VOLTAGE : VEB(V)

COLLECTOR TO BASE VOLTAGE : VCB(V)

Fig.6 Collector output capacitance

vs. collector-base voltage

Emitter input capacitance

vs. emitter-base voltage

Rev.A

2/2

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