2SD2661 데이터 시트보기 (PDF) - ROHM Semiconductor

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2SD2661

Middle Power Transistor (12V / 2A)

ROHM Semiconductor 

2SD2661

　 　 　 　　 　

lAbsolute maximum ratings (Ta = 25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Range of storage temperature

　 　 　 　 　 　 　 　 Datasheet

Symbol

Values

Unit

VCBO

15

V

VCEO

12

V

VEBO

6

V

IC

2

A

ICP*1

4

A

PD*2

0.5

W

PD*3

2.0

W

Tj

150

℃

Tstg

-55 to +150

℃

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min. Typ. Max.

Collector-base breakdown

voltage

BVCBO IC = 10μA

15 -

-

V

Collector-emitter breakdown

voltage

BVCEO IC = 1mA

12 -

-

V

Emitter-base breakdown voltage BVEBO IE = 10μA

6

-

-

V

Collector cut-off current

ICBO VCB = 15V

-

- 100 nA

Emitter cut-off current

IEBO VEB = 6V

-

- 100 nA

Collector-emitter saturation voltage VCE(sat)*4 IC = 1A, IB = 50mA

- 90 180 mV

DC current gain

hFE*4 VCE = 2V, IC = 200mA 270

-

680

-

Transition frequency

f

*4

T

VCE = 2V, IE = -200mA,

f = 100MHz

-

360

-

MHz

Output capacitance

Cob

VCB = 10V, IE = 0A,

f = 1MHz

-

20

-

pF

*1 Pw=1ms, Single Pulse

*2 Each terminal mounted on a reference land.

*3 Mounted on a ceramic board.(40×40×0.7mm)

*4 Pulsed

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　

　

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20190527 - Rev.004

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