STU6N60M2 데이터 시트보기 (PDF) - STMicroelectronics

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STU6N60M2

N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh™ M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages

STMicroelectronics 

STF6N60M2, STP6N60M2, STU6N60M2

3

Test circuits

Test circuits

Figure 17. Switching times test circuit for

resistive load

Figure 18. Gate charge test circuit

VDD

VD

VGS

RG

RL

2200

μF

D.U.T.

3.3

μF VDD

12V

Vi=20V=VGMAX

2200

μF

IG=CONST

2.7kΩ

47kΩ

1kΩ

100nF

100Ω

D.U.T.

VG

PW

47kΩ

PW

AM01468v1

1kΩ

AM01469v1

Figure 19. Test circuit for inductive load

switching and diode recovery times

Figure 20. Unclamped inductive load test circuit

G

25 Ω

A

D

D.U.T.

S

B

AA

FAST

DIODE

L=100μH

B

3.3

B

μF

D

G

RG

S

1000

μF

VDD

Vi

L

VD

2200

3.3

μF

μF

VDD

ID

D.U.T.

AM01470v1

Figure 21. Unclamped inductive waveform

9%5'66

9'

Pw

AM01471v1

Figure 22. Switching time waveform

ton

toff

tdon

tr

tdoff tf

9''

,'0

,'

0

9''

90%

10% VDS

90%

VGS

90%

10%

$0Y

0

10%

AM01473v1

DocID024771 Rev 2

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