PHPT60606NY 데이터 시트보기 (PDF) - NXP Semiconductors.
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PHPT60606NY Datasheet PDF : 16 Pages
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NXP Semiconductors
PHPT60606NY
60 V, 6 A NPN high power bipolar transistor
11. Test information
IB
90 %
10 %
IC
90 %
IBon (100 %)
input pulse
(idealized waveform)
IBoff
output pulse
(idealized waveform)
IC (100 %)
10 %
td
tr
ton
Fig. 12. BISS transistor switching time definition
VBB
VCC
ts
toff
t
tf
006aaa003
oscilloscope (probe)
450 Ω
VI
RB
R2
R1
Fig. 13. Test circuit for switching times
RC
Vo (probe) oscilloscope
450 Ω
DUT
mlb826
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PHPT60606NY
Product data sheet
All information provided in this document is subject to legal disclaimers.
8 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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