PHPT60606NY 데이터 시트보기 (PDF) - NXP Semiconductors.
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PHPT60606NY Datasheet PDF : 16 Pages
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NXP Semiconductors
PHPT60606NY
60 V, 6 A NPN high power bipolar transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base
VEBO
emitter-base voltage
open collector
IC
collector current
ICM
peak collector current
single pulse; tp ≤ 1 ms
IB
base current
IBM
peak base current
single pulse; tp ≤ 1 ms
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
Min Max Unit
-
60
V
-
60
V
-
7
V
-
6
A
-
14
A
-
800 mA
-
1.4 A
[1]
-
[2]
-
1.35 W
3.25 W
[3]
-
5
W
[4]
-
25
W
-
175 °C
-55 175 °C
-65 175 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB); single-sided copper; tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB; single-sided copper; tin-plated and mounting pad for collector 6 cm2.
[3] Device mounted on a ceramic PCB; Al2O3, standard footprint.
[4] Power dissipation from junction to mounting base.
PHPT60606NY
Product data sheet
All information provided in this document is subject to legal disclaimers.
8 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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