PHPT60606NY 데이터 시트보기 (PDF) - NXP Semiconductors.
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PHPT60606NY Datasheet PDF : 16 Pages
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NXP Semiconductors
PHPT60606NY
60 V, 6 A NPN high power bipolar transistor
10. Characteristics
Table 7.
Symbol
ICBO
ICES
IEBO
hFE
VCEsat
RCEsat
VBEsat
VBEon
td
tr
ton
ts
tf
toff
Characteristics
Parameter
Conditions
collector-base cut-off
current
VCB = 48 V; IE = 0 A; Tamb = 25 °C
VCB = 48 V; IE = 0 A; Tj = 150 °C
collector-emitter cut-off VCE = 48 V; VBE = 0 V; Tamb = 25 °C
current
emitter-base cut-off
current
VEB = 7 V; IC = 0 A; Tamb = 25 °C
DC current gain
VCE = 2 V; IC = 500 mA; Tamb = 25 °C
VCE = 2 V; IC = 1 A; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
collector-emitter
saturation voltage
VCE = 2 V; IC = 3 A; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
VCE = 2 V; IC = 6 A; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C; pulsed
IC = 1 A; IB = 50 mA; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C; pulsed
collector-emitter
saturation resistance
IC = 3 A; IB = 300 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = 6 A; IB = 300 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = 6 A; IB = 600 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
base-emitter saturation IC = 1 A; IB = 50 mA; pulsed;
voltage
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = 3 A; IB = 300 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = 6 A; IB = 300 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
base-emitter turn-on
voltage
VCE = 2 V; IC = 0.5 A; Tamb = 25 °C
delay time
rise time
VCC = 12.5 V; IC = 3 A; IBon = 0.15 A;
IBoff = -0.15 A; Tamb = 25 °C
turn-on time
storage time
fall time
turn-off time
PHPT60606NY
Product data sheet
All information provided in this document is subject to legal disclaimers.
8 December 2014
Min Typ Max Unit
-
-
100 nA
-
-
50
µA
-
-
100 nA
-
-
100 nA
240 390 -
210 340 -
100 160 -
40
70
-
-
50
75
mV
-
110 160 mV
-
240 360 mV
-
34
45
mΩ
-
0.85 0.95 V
-
1
1.15 V
-
1.05 1.2 V
-
0.7 0.8 V
-
10
-
ns
-
135 -
ns
-
145 -
ns
-
465 -
ns
-
225 -
ns
-
690 -
ns
© NXP Semiconductors N.V. 2014. All rights reserved
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