PHPT60606NY 데이터 시트보기 (PDF) - NXP Semiconductors.
부품명
상세내역
제조사
PHPT60606NY Datasheet PDF : 16 Pages
| |||
NXP Semiconductors
PHPT60606NY
60 V, 6 A NPN high power bipolar transistor
Symbol
fT
Cc
600
hFE
400
200
Parameter
transition frequency
collector capacitance
Conditions
VCE = 10 V; IC = 500 mA; f = 100 MHz;
Tamb = 25 °C
VCB = 10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
Min Typ Max Unit
-
180 -
MHz
-
23
-
pF
aaa-014775
(1)
(2)
(3)
8
IC
(A)
6
4
2
115
100
85
70
55
40
25
15
10
IB = 5 mA
aaa-014776
0
10-1
1
10
102
103
104
IC (mA)
VCE = 2 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 4. DC current gain as a function of collector
current; typical values
0
0
1
2
3
4
5
VCE (V)
Tamb = 25 °C
Fig. 5. Collector current as a function of collector-
emitter voltage; typical values
PHPT60606NY
Product data sheet
All information provided in this document is subject to legal disclaimers.
8 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
7 / 16
Share Link: 