PHPT60606NY 데이터 시트보기 (PDF) - NXP Semiconductors.
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PHPT60606NY Datasheet PDF : 16 Pages
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NXP Semiconductors
PHPT60606NY
60 V, 6 A NPN high power bipolar transistor
1.2
VBE
(V)
1.0
0.8
0.6
0.4
aaa-014777
(1)
(2)
(3)
1.2
VBEsat
(V)
1.0
0.8
0.6
0.4
aaa-014778
(1)
(2)
(3)
0.2
10-1
1
10
102
103
104
IC (mA)
VCE = 2 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 6. Base-emitter voltage as a function of collector
current; typical values
1
aaa-014779
0.2
10-1
1
10
102
103
104
IC (mA)
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 7. Base-emitter saturation voltage as a function of
collector current; typical values
1
aaa-014780
VCEsat
(V)
10-1
10-2
(1)
(2)
(3)
VCEsat
(V)
10-1
10-2
(1)
(2)
(3)
(4)
10-3
10-1
1
10
102
103
104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 8. Collector-emitter saturation voltage as a
function of collector current; typical values
10-3
10-1
1
10
102
103
104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 20
(4) IC/IB = 10
Fig. 9. Collector-emitter saturation voltage as a
function of collector current; typical values
PHPT60606NY
Product data sheet
All information provided in this document is subject to legal disclaimers.
8 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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