STE140NF20D(2009) 데이터 시트보기 (PDF) - STMicroelectronics

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STE140NF20D
(Rev.:2009)

N-channel 200 V, 0.010 Ω, 140 A, ISOTOP STripFET™ II with fast recovery diode Power MOSFET

STMicroelectronics 

STE140NF20D

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS

VGS

ID(1)

ID (1)

IDM(2)

PTOT (2)

dv/dt(3)

Drain-source voltage (VGS = 0)

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC=100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Derating factor

Peak diode recovery voltage slope

TJ

Operating junction temperature

Tstg

Storage temperature

1. The value is rated according Rthj-pcb

2. Pulse width limited by safe operating area

3. ISD ≤ 30 A, di/dt ≤ TBD A/µs, VDD ≤ 80% V(BR)DSS

Table 3. Thermal resistance

Symbol

Parameter

Rthj-case

Rthj-amb

Thermal resistance junction-case

Thermal resistance junction-ambient

Table 4. Avalanche data

Symbol

Parameter

IAR

Avalanche current, repetitive or not repetitive (1)

EAS

Single pulse avalanche energy (2)

1. Pulse width limited by Tjmax

2. Strating Tj = 25 °C, ID = IAR, VDD = 50 V

Electrical ratings

Value

200

± 20

140

260

560

500

4

25

- 55 to 150

Unit

V

V

A

A

A

W

W/°C

V/ns

°C

Value

0.25

40

Unit

°C/W

°C/W

Value

Unit

TBD

A

TBD

mJ

3/10

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