STE140NF20D(2009) 데이터 시트보기 (PDF) - STMicroelectronics

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STE140NF20D
(Rev.:2009)

N-channel 200 V, 0.010 Ω, 140 A, ISOTOP STripFET™ II with fast recovery diode Power MOSFET

STMicroelectronics 

STE140NF20D

Electrical characteristics

Table 7.

Symbol

Switching times

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Test conditions

VDD = 100 V, ID= 70 A,

RG=4.7 Ω, VGS =10 V

(see Figure 2)

Min. Typ. Max. Unit

TBD

ns

TBD

ns

TBD

ns

TBD

ns

Table 8.

Symbol

Source drain diode

Parameter

Test conditions

Min Typ. Max Unit

ISD

ISDM(1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD = 70 A, VGS=0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 70 A,

di/dt = 100 A/µs,

VDD= 100 V, Tj=150 °C

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

140 A

560 A

1.6 V

TBD

ns

TBD

nC

TBD

A

5/10

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