RMPA61800(1998) 데이터 시트보기 (PDF) - Raytheon Company
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RMPA61800 Datasheet PDF : 2 Pages
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RMPA61800
Dual-Channel 6-18 GHz 2W MMIC Power Amplifier
Description
The Raytheon RMPA61800 is a fully monolithic power amplifier operating
over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron
Pseudomorphic High Electron Mobility Transistor (PHEMT) process to
maximize efficiency and output power. The chip configuration incorporates
two stages of reactively combined amplifiers at the output preceded by an
input amplifier stage. Two identical amplifier channels are provided to
achieve a typical total combined (using an off-chip combiner) output power
of 33 dBm at 3 dB gain compression. A single channel provides typically,
18 dB small signal gain and 31 dBm output power at 1 dB gain
compression.
Features
s Two Identical Channels
s 18.0 dB Typical Small Signal Gain, Single Channel
s 2.0:1 Typical Input SWR, 2.5:1 Typical Output SWR, Single Channel
s 31 dBm Output Power at 1 dB Gain Compression, Single Channel
s 32 dBm Output Power at 3 dB Gain Compression, Single Channel
s 33 dBm Output Power at 3 dB Gain Compression, Dual Channel
s 22% Typical Power Added Efficiency at 1 dB Gain Compression
s Chip size: 6.55 mm x 5.15 mm
Electrical
Characteristics
(Single Channel)
Layout and
Schematic
Parameter
Min
Frequency Range
6.0
Small Signal Gain
15
P1dB Compression
28
P3dB Compression
30
PAE at 1 dB Gain Comp. 12
Input Return Loss
Output Return Loss
Gate Voltage (VG)
Typ
Max
18.0
18
31
32
22
9.5
7.4
-0.4
-0.25
Unit
GHz
dB
dBm
dBm
%
dB
dB
VDC
Note: Quiescent Bias VD = +8V, ID = 600mA/channel, TC = +25°C.
This is preliminary information which contains data on products that are in transfer to production.
Characteristic performance data and specifications are subject to change without notice.
Tel: 978-470-9715
FAX: 978-470-9452
www.raytheon.com/micro
Revised January 28, 1998
Page 1
Microelectronics
362 Lowell Street
Andover, MA 01810
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