STP6N80K5 데이터 시트보기 (PDF) - STMicroelectronics

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STP6N80K5

N-channel 800 V, 1.3 Ω typ., 4.5 A MDmesh™ K5 Power MOSFETs in D²PAK, DPAK, I²PAK and TO-220 packages

STMicroelectronics 

STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5

Electrical characteristics

Figure 8. Gate charge vs gate-source voltage

VGS

(V) VDS

12

VDD=640V

ID=4.5A

AM18117v1 VDS

(V)

600

10

500

8

400

6

300

4

200

2

100

0

0

0 2 4 6 8 10 12 Qg(nC)

Figure 10. Capacitance variations

C

AM18119v1

(pF)

1000

Ciss

100

Figure 9. Static drain-source on-resistance

5'6RQ

:

9*6 9

*,3*07



















 ,'$

Figure 11. Output capacitance stored energy

Eoss

(µJ)

AM18120v1

4

3

10

Coss

Crss

1

0.1

0.1

1

10

100 VDS(V)

Figure 12. Normalized gate threshold voltage vs

temperature

VGS(th)

(norm)

AM18082v2

1.2

ID=100 µA

1.1

1

0.9

0.8

0.7

0.6

0.5

0.4

-100 -50 0 50 100 150 TJ(°C)

2

1

0

0

200

400

600

VDS(V)

Figure 13. Normalized on-resistance vs

temperature

RDS(on)

(norm)

2.5

ID=2 A

VGS=10 V

AM18081v2

2

1.5

1

0.5

0

-100 -50 0 50 100 150 TJ(°C)

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