SPD06N80C3 데이터 시트보기 (PDF) - Infineon Technologies

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SPD06N80C3

Cool MOS™ Power Transistor

Infineon Technologies 

Final data

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

• Worldwide best RDS(on) in TO252

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

SPD06N80C3

VDS

RDS(on)

ID

800 V

0.9 Ω

6

A

P-TO252

Type

SPD06N80C3

Package

P-TO252

Ordering Code

Q67040-S4352

Marking

06N80C3

Maximum Ratings, at TC = 25°C, unless otherwise specified

Parameter

Symbol

Continuous drain current

ID

TC = 25 °C

TC = 100 °C

Pulsed drain current, tp limited by Tjmax

Avalanche energy, single pulse

ID puls

EAS

ID=1.2A, VDD=50V

Avalanche energy, repetitive tAR limited by Tjmax1) EAR

ID=6A, VDD=50V

Avalanche current, repetitive tAR limited by Tjmax

Gate source voltage

Power dissipation, TC = 25°C

Operating and storage temperature

IAR

VGS

Ptot

Tj , Tstg

Value

6

3.8

18

230

0.2

6

±20

83

-55... +150

Unit

A

mJ

A

V

W

°C

Page 1

2003-07-02

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