SIA430DJ-T4-GE3 데이터 시트보기 (PDF) - Vishay Semiconductors
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SIA430DJ-T4-GE3 Datasheet PDF : 9 Pages
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
35
25
SiA430DJ
Vishay Siliconix
28
20
21
15
14
Package Limited
10
7
5
0
0
25
50
75
100 125 150
TC - Case Temperature (°C)
Current Derating*
0
0
25
50
75
100 125 150
TJ - Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68685
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S13-0116-Rev. B, 21-Jan-13
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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