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AT-41511-TR2G 데이터 시트보기 (PDF) - Avago Technologies

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AT-41511-TR2G Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
AT-41511, AT-41533 Absolute Maximum Ratings
Symbol
VEBO
VCBO
VCEO
IC
PT
Tj
TSTG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation[2,3]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum[1]
1.5
20
12
50
225
150
-65 to 150
Thermal Resistance:[2]
Tjc =550°C/W
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. TMounting Surface = 25°C.
3. Derate at 1.82 mW/°C for TC > 26°C.
Electrical Specifications, TA = 25°C
Symbol
hFE
Parameters and Test Conditions
Forward Current Transfer Ratio
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE = 5 V
IC = 5 mA
VCB = 3 V
VEB = 1 V
AT-41511
Units Min Typ Max
-
30 150 270
AT-41533
Min Typ Max
30 150 270
μA
0.2
0.2
μA
1.0
1.0
Characterization Information, TA = 25°C
Symbol
NF
GA
P1dB
G1dB
IP3
|S21E|2
Parameters and Test Conditions
Noise Figure
VCE = 5 V, IC = 5 mA
Associated Gain
VCE = 5 V, IC = 5 mA
Power at 1 dB Gain Compression (opt tuning)
VCE = 5 V, IC = 25 mA
Gain at 1 dB Gain Compression (opt tuning)
VCE = 5 V, IC = 25 mA
Output Third Order Intercept Point,
VCE = 5 V, IC =25 mA (opt tuning)
Gain in 50 Ω system; VCE = 5 V, IC = 5 mA
f = 0.9 GHz
f = 2.4 GHz
f = 0.9 GHz
f = 2.4 GHz
f = 0.9 GHz
f = 0.9 GHz
f = 0.9 GHz
f = 0.9 GHz
f = 2.4 GHz
AT-41511 AT-41533
Units Min Typ Min Typ
dB
1.0
1.0
1.7
1.6
dB
15.5
14.5
11
9
dBm
14.5
14.5
dB
17.5
14.5
dBm
25
25
dB 13.5 15.5 10.8 12.8
7.9
5.2
2

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