BC307B(2007) 데이터 시트보기 (PDF) - ON Semiconductor
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BC307B Datasheet PDF : 4 Pages
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BC307B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −2.0 mAdc, IB = 0)
V(BR)CEO
−45
−
Emitter −Base Breakdown Voltage
(IE = −100 mAdc, IC = 0)
V(BR)EBO
−5.0
−
Collector−Emitter Leakage Current
(VCES = −50 V, VBE = 0)
(VCES = −50 V, VBE = 0) TA = 125°C
ICES
−
−0.2
−
−0.2
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mAdc, VCE = −5.0 Vdc)
(IC = −2.0 mAdc, VCE = −5.0 Vdc)
(IC = −100 mAdc, VCE = −5.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −0.5 mAdc)
(IC = −10 mAdc, IB = see Note 1)
(IC = −100 mAdc, IB = −5.0 mAdc)
Base −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −0.5 mAdc)
(IC = −100 mAdc, IB = −5.0 mAdc)
Base−Emitter On Voltage
(IC = −2.0 mAdc, VCE = −5.0 Vdc)
hFE
VCE(sat)
VBE(sat)
VBE(on)
−
200
−
−
−
−
−
−
−0.55
150
290
180
−0.10
−0.30
−0.25
−0.7
−1.0
−0.62
DYNAMIC CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz)
fT
−
280
Common Base Capacitance
(VCB = −10 Vdc, IC = 0, f = 1.0 MHz)
Ccbo
−
−
Noise Figure
(IC = −0.2 mAdc, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz)
NF
−
2.0
1. IC = −10 mAdc on the constant base current characteristic, which yields the point IC = −11 mAdc, VCE = −1.0 V.
Max
Unit
−
Vdc
−
Vdc
−15
nAdc
−4.0
mA
−
−
460
−
Vdc
−0.3
−0.6
−
Vdc
−
−
−0.7
Vdc
−
MHz
6.0
pF
10
dB
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