BCW68GL(2015) 데이터 시트보기 (PDF) - ON Semiconductor
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BCW68GL Datasheet PDF : 5 Pages
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BCW68GL
TYPICAL CHARACTERISTICS
500
150°C
400
300 25°C
200
−55°C
100
VCE = 1 V
1
IC/IB = 10
0.1
25°C
150°C
−55°C
0
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
1.1
1.0
IC/IB = 10
0.9
0.8
0.7
0.6
0.5
−55°C
25°C
150°C
0.4
0.3
0.2
0.0001 0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
1000
VCE = 1 V
TA = 25°C
0.01
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1 VCE = 5 V
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
0.3
0.2
0.0001 0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Voltage vs. Collector
Current
100
10
0.1
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 5. Current Gain Bandwidth Product vs.
Collector Current
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