BFM520,115 데이터 시트보기 (PDF) - NXP Semiconductors.
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BFM520,115 Datasheet PDF : 12 Pages
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NXP Semiconductors
Dual NPN wideband transistor
Product specification
BFM520
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
DC characteristics of any single transistor
V(BR)CBO collector-base breakdown voltage IC = 2.5 A; IE = 0
20
V(BR)CEO collector-emitter breakdown voltage IC = 10 A; IB = 0
8
V(BR)EBO emitter-base breakdown voltage IE = 2.5 A; IC = 0
2.5
ICBO
collector-base leakage current
VCB = 6 V; IE = 0
hFE
DC current gain
IC = 20 mA; VCE = 6 V
60
DC characteristics of the dual transistor
hFE
VBEO
ratio of highest and lowest DC
current gain
difference between highest and
lowest base-emitter voltage
(offset voltage)
IC1 = IC2 = 20 mA;
1
VCE1 = VCE2 = 6 V
IE1 = IE2 = 30 mA; Tamb = 25 C 0
V
V
V
50
nA
120 250
1.2
1
mV
AC characteristics of any single transistor
fT
transition frequency
Cc
collector capacitance
Cre
feedback capacitance
GUM
maximum unilateral power gain;
note 1
s21 2
F
insertion power gain
noise figure
IC = 20 mA; VCE = 3 V; f = 1 GHz
IE = ie = 0; VCB = 3 V; f = 1 MHz
IC = 0; VCB = 3 V; f = 1 MHz
IC = 20 mA; VCE = 3 V;
Tamb = 25 C; f = 900 MHz
IC = 20 mA; VCE = 3 V;
Tamb = 25 C; f = 2 GHz
IC = 20 mA; VCE = 3 V;
13
f = 900 MHz; Tamb = 25 C
IC = 5 mA; VCE = 3 V;
f = 900 MHz; S = opt
IC = 20 mA; VCE = 3 V;
f = 900 MHz; S = opt
IC = 5 mA; VCE = 3 V;
f = 2 GHz; S = opt
9
0.5
0.4
15
9
14.5
1.2 1.6
1.7 2.1
1.9
GHz
pF
pF
dB
dB
dB
dB
dB
dB
Note
1.
GUM is the maximum unilateral power gain, assuming s12 is zero.
GUM
=
10
log
-----------------------s----2--1----2-----------------------
1 – s11 21 – s22 2
dB
1996 Oct 08
4
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