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BFR93AW(2001) 데이터 시트보기 (PDF) - Infineon Technologies

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BFR93AW
(Rev.:2001)
Infineon
Infineon Technologies Infineon
BFR93AW Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
NPN Silicon RF Transistor
 For low distortion broadband amplifiers and
oscillators up to 2 GHz at collector currents from
5 mA to 30 mA
BFR93AW
3
2
1
VSO05561
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFR93AW
Marking
R2s
Pin Configuration
1=B
2=E
3=C
Package
SOT323
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS  104 °C 1)
Junction temperature
Ambient temperature
Storage temperature
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
Value
Unit
12
V
20
20
2
50
mA
6
300
mW
150
°C
-65 ... 150
-65 ... 150
Thermal Resistance
Junction - soldering point2)
RthJS
 155
K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
1
Jul-30-2001

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