BFR93AW(2001) 데이터 시트보기 (PDF) - Infineon Technologies

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BFR93AW
(Rev.:2001)

NPN Silicon RF Transistor

Infineon Technologies 

BFR93AW

Power Gain Gma, Gms = f(VCE):_____

|S21|2 = f(VCE):---------

f = Parameter

16

IC=30mA

dB

0.9GHz

0.9GHz

12

10

1.8GHz

8

1.8GHz

6

4

2

0

0

2

4

6

8

V

12

VCE

Power Gain Gma, Gms = f(f)

Intermodulation Intercept Point IP3=f(IC)

(3rd order, Output, ZS=ZL=50 )

VCE = Parameter, f = 900MHz

35

dBm

25

20

5V

4V

3V

2V

15

1V

10

5

0

0

10

20

30

40 mA

60

IC

Power Gain |S21|2= f(f)

VCE = Parameter

34

dB IC=30mA

28

24

20

16

12

8

10V

2V

4

1V

0.7V

0

0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5

f

VCE = Parameter

32

dB IC=30mA

26

22

18

14

10

6

10V

2

2V

1V

0.7V

-2

0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5

f

7

Jul-30-2001

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