BFR93AW 데이터 시트보기 (PDF) - Infineon Technologies

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BFR93AW

Low Noise Silicon Bipolar RF Transistor

Infineon Technologies 

Low Noise Silicon Bipolar RF Transistor

• For low distortion amplifiers and

oscillators up to 2 GHz at collector currents from

5 mA to 30 mA

• Pb-free (RoHS compliant) and halogen-free package

with visible leads

• Qualification report according to AEC-Q101 available

BFR93AW

3

2

1

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFR93AW

Marking

Pin Configuration

R2s

1=B

2=E

3=C

Package

SOT323

Maximum Ratings at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation1)

TS ≤ 108 °C

Junction temperature

Ambient temperature

VCEO

VCES

VCBO

VEBO

IC

IB

Ptot

TJ

TA

12

20

20

2

90

9

300

150

-65 ... 150

Storage temperature

TStg

-65 ... 150

Thermal Resistance

Parameter

Symbol

Value

Junction - soldering point2)

RthJS

140

1TS is measured on the collector lead at the soldering point to the pcb

2For calculation of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)

Unit

V

mA

mW

°C

Unit

K/W

1

2014-04-04

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