BFR93AWE6327 데이터 시트보기 (PDF) - Infineon Technologies

부품명

상세내역

제조사

BFR93AWE6327

Low Noise Silicon Bipolar RF Transistor

Infineon Technologies 

BFR93AW

Electrical Characteristics at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

AC Characteristics (verified by random sampling)

Transition frequency

IC = 30 mA, VCE = 8 V, f = 500 MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz, VBE = 0 ,

emitter grounded

fT

4.5 6

- GHz

Ccb

- 0.58 0.8 pF

Collector emitter capacitance

VCE = 10 V, f = 1 MHz, VBE = 0 ,

base grounded

Cce

-

0.3

-

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz, VCB = 0 ,

collector grounded

Ceb

-

1.9

-

Minimum noise figure

IC = 5 mA, VCE = 8 V, ZS = ZSopt,

f = 900 MHz

f = 1.8 GHz

NFmin

dB

-

1.5

-

-

2.6

-

Power gain, maximum available1)

Gma

IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,

f = 900 MHz

f = 1.8 GHz

- 15.5 -

- 10.5 -

Transducer gain

IC = 30 mA, VCE = 8 V, ZS = ZL = 50 Ω,

f = 900 MHz

f = 1.8 MHz

|S21e|2

dB

-

13

-

-

7.5

-

Third order intercept point at output2)

IC = 30 mA, VCE = 8 V, ZS = ZL = 50 Ω,

f = 0.9 GHz

IP3

-

15

- dBm

1dB Compression point

IC = 30 mA, VCE = 8 V, ZS = ZL = 50 Ω,

f = 0.9 GHz

P-1dB

-

6

-

1Gma = |S21e / S12e| (k-(k²-1)1/2)

2IP3 value depends on termination of all intermodulation frequency components.

Termination used for this measurement is 50Ω from 0.2 MHz to 12 GHz

3

2014-04-04

Share Link: