BFR93AW,135 데이터 시트보기 (PDF) - NXP Semiconductors.

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BFR93AW,135

NPN 5 GHz wideband transistor

NXP Semiconductors. 

NXP Semiconductors

NPN 5 GHz wideband transistor

Product specification

BFR93AW

CHARACTERISTICS

Tj = 25 C (unless otherwise specified).

SYMBOL

PARAMETER

ICBO

collector leakage current

hFE

DC current gain

Cc

collector capacitance

Ce

emitter capacitance

Cre

feedback capacitance

fT

transition frequency

GUM

maximum unilateral power

gain; note 1

F

noise figure

CONDITIONS

MIN.

IE = 0; VCB = 5 V



IC = 30 mA; VCE = 5 V

40

IE = ie = 0; VCB = 5 V; f = 1 MHz 

IC = ic = 0; VEB = 0.5 V;



f = 1 MHz

IC = 0; VCE = 5 V; f = 1 MHz



IC = 30 mA; VCE = 5 V;

4

f = 500 MHz

IC = 30 mA; VCE = 8 V;



f = 1 GHz; Tamb = 25 C

IC = 30 mA; VCE = 8 V;



f = 2 GHz; Tamb = 25 C

IC = 5 mA; VCE = 8 V;



f = 1 GHz; s = opt

IC = 5 mA; VCE = 8 V;



f = 2 GHz; s = opt

TYP.



90

0.7

2.3

0.6

5

13

8

1.5

2.1

MAX.

50







UNIT

nA

pF

pF



pF



GHz



dB



dB



dB



dB

Note

1.

GUM is the maximum unilateral power gain, assuming s12 is zero and

GUM

=

10

log

-----------------------s----2--1----2-----------------------

1 – s11 21 – s22 2

dB.

1995 Sep 18

4

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