VBP104SR(2010) 데이터 시트보기 (PDF) - Vishay Semiconductors
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VBP104SR Datasheet PDF : 8 Pages
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Silicon PIN Photodiode
VBP104S, VBP104SR
Vishay Semiconductors
1000
100
10
1
VR = 5 V
λ = 950 nm
0.1
0.01
0.1
1
10
94 8421
Ee - Irradiance (mW/cm2)
Fig. 3 - Reverse Light Current vs. Irradiance
100
λ = 950 nm
1 mW/cm2
0.5 mW/cm2
10
0.2 mW/cm2
0.1 mW/cm2
0.05 mW/cm2
1
0.1
1
10
100
94 8422
VR - Reverse Voltage (V)
Fig. 4 - Reverse Light Current vs. Reverse Voltage
80
E=0
60
f = 1 MHz
40
20
0
0.1
1
10
100
94 8423
VR - Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
1.0
0.8
0.6
0.4
0.2
0
350
94 8420
550
750
950
λ - Wavelength (nm)
1150
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
0°
10° 20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.6 0.4 0.2 0
94 8406
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
Document Number: 81170
Rev. 1.2, 20-Apr-10
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
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