AR709LTS10 데이터 시트보기 (PDF) - Power Semiconductors

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AR709LTS10

RECTIFIER DIODE

Power Semiconductors 

AR709LT RECTIFIER DIODE

FINAL SPECIFICATION nov 02 - ISSUE : 02

FORWARD CHARACTERISTIC

Tj = 190 °C

35000

30000

25000

20000

15000

10000

5000

0

0.6

0.8

1

1.2

1.4

1.6

Forward Voltage [V]

POSEICO

POSEICO SPA

POwer SEmiconductors Italian COrporation

SURGE CHARACTERISTIC

Tj = 190 °C

90

80

70

60

50

40

30

20

10

0

1

10

100

n° cycles

TRANSIENT THERMAL IMPEDANCE

DOUBLE SIDE COOLED

10.0

9.0

8.0

7.0

6.0

5.0

4.0

3.0

2.0

1.0

0.0

0.001 0.01

0.1

1

t[s]

10

100

All the characteristics given in this data sheet are guaranteed only with uniform

clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm

and roughness < 2 µm.

In the interest of product improvement POSEICO SPA reserves the right to change

any data given in this data sheet at any time without previous notice.

If not stated otherwise the maximum value of ratings (simbols over shaded

background) and characteristics is reported.

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