CY7C1061DV18-15BV1XI 데이터 시트보기 (PDF) - Cypress Semiconductor

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CY7C1061DV18-15BV1XI

16-Mbit (1M × 16) Static RAM

Cypress Semiconductor 

CY7C1061DV18

Data Retention Characteristics

Over the Operating Range

Parameter

VDR

ICCDR

Description

VCC for data retention

Data retention current

tCDR[5]

tR[6]

Chip deselect to data retention

time

Operation recovery time

Conditions

VCC = 1.5 V,

CE1 > VCC – 0.2 V, CE2 < 0.2 V,

VIN > VCC – 0.2 V, or VIN < 0.2 V

Data Retention Waveform

Figure 4. Data Retention Waveform

DATA RETENTION MODE

VCC

1.65V

VDR > 1.5 V

tCDR

CE

Min

Typ [4]

Max Unit

1.5

–

–

V

25

mA

–

–

0

–

tRC

–

–

ns

–

ns

1.65 V

tR

Notes

4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C.

5. Tested initially and after any design or process changes that may affect these parameters

6. Full device operation requires linear VCC ramp from VDR to VCC(min) > 100 s or stable at VCC(min) > 100 s.

Document Number: 001-08350 Rev. *I

Page 7 of 18

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