BFM520 데이터 시트보기 (PDF) - Philips Electronics
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BFM520 Datasheet PDF : 10 Pages
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Philips Semiconductors
Dual NPN wideband transistor
Product specification
BFM520
1.5
handbook, halfpage
Ptot
(mW)
double loaded
1
single loaded
0.5
MBG228
handbook1,2halfpage
fT
(GHz)
8
4
MRA705
VCE = 6V
VCE = 3V
0
0
50
100
150
200
Ts (oC)
Fig.2 Power derating as a function of soldering
point temperature; typical values.
0
10−1
1
10 IC (mA) 102
f = 1 GHz; Tamb = 25 °C.
Fig.3 Transition frequency as a function of
collector current; typical values.
250
handbook, halfpage
hFE
200
150
100
50
010−2
10−1
1
MRA703
10 IC (mA) 102
0.6
handbook, halfpage
Cre
(pF)
0.4
0.2
0
0
4
MRA704
8 VCB (V) 12
VCE = 6 V.
Fig.4 DC current gain as a function of collector
current; typical values.
IC = 0; f = 1 MHz.
Fig.5 Feedback capacitance as a function of
collector-base voltage; typical values.
1996 Oct 08
5
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