BFM520 데이터 시트보기 (PDF) - Philips Electronics

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BFM520

Dual NPN wideband transistor

Philips Electronics 

Philips Semiconductors

Dual NPN wideband transistor

Product specification

BFM520

APPLICATION INFORMATION

SPICE parameters for any single BFM520 die

SEQUENCE No.

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19(1)

20(1)

21(1)

22

23

24

25

26

27

28

29

30

31

32

33

34

35(1)

36(1)

37(1)

38

PARAMETER

IS

BF

NF

VAF

IKF

ISE

NE

BR

NR

VAR

IKR

ISC

NC

RB

IRB

RBM

RE

RC

XTB

EG

XTI

CJE

VJE

MJE

TF

XTF

VTF

ITF

PTF

CJC

VJC

MJC

XCJC

TR

CJS

VJS

MJS

FC

VALUE UNIT

1.016 fA

220.1 −

1.000 −

48.06 V

510.0 mA

283.0 fA

2.035 −

100.7 −

0.988 −

1.692 V

2.352 mA

24.48 aA

1.022 −

10.00 Ω

1.000 µA

10.00 Ω

0.775 Ω

2.210 Ω

0.000 −

1.110 eV

3.000 −

1.245 pF

600.0 mV

0.258 −

8.616 ps

6.788 −

1.414 V

110.3 mA

45.01 deg

447.6 fF

189.2 mV

0.071 −

0.130 −

543.7 ps

0.000 F

750.0 mV

0.000 −

0.780 −

Note

1. These parameters have not been extracted,

the default values are shown.

handbook, halfpage

C1

LP

C2

LP

B1

LB

T1

T2

B2

LB

LE

LE

E1

E2

MBG188

Fig.14 Package equivalent circuit SOT363A

(inductance only).

Lead inductances (nH)

LP

0.4

LB

0.6

LE

1.0

E2 3

E1 27 6

B2 1 27 3

C2 3 17 36 48

C1 48 36 17 3 6

MBG189

B1 E2 E1 B2 C2

Fig.15 Package capacitance (fF) between

indicated nodes.

1996 Oct 08

8

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