SSD2011A 데이터 시트보기 (PDF) - Fairchild Semiconductor

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SSD2011A

Dual P-CHANNEL POWER MOSFET

Fairchild Semiconductor 

SSD2011A

Dual P-CHANNEL

POWER MOSFET

Electrical Characteristics (TC=25℃ unless otherwise specified)

Symbol

BVDSS

VGS(th)

IGSS

IDSS

IDON

RDS(on)

gfs

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

Characteristic

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Source Leakage , Forward

Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

On-State Drain-Source Current

Static Drain-Source

On-State Resistance

②

Forward Transconductance ②

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain (“Miller”) Charge

Min. Typ. Max. Units

Test Condition

-60 -- -- V VGS=0V,ID=-250μA

-1.0 -- -- V VDS= -5V ,ID=-250μA

-- -- -100 nA VGS=-20V

-- -- 100 nA VGS=20V

--

--

--

--

-2.0 μA

-25

VDS=-40V

VDS=-40V,TJ=55℃

-10 -- -- A VDS=-5V, VGS=-10V

-- -- 0.28 Ω VGS=-10V,ID=-2.0A

-- -- 0.5

VGS=-4.5V,ID=-1.6A

-- 5.0 -- S VDS =-15V,ID=-2.0A

-- 7.0 25

-- 16 30 ns VDD=-30V,ID=-1.0A,

-- 37 60

R0=6.0Ω,

-- 17 40

②③

-- 16 30

-- 2.2 --

-- 4.0 --

VDS=-30V,VGS=-10V,

nC ID=-2.0A

②③

Source-Drain Diode Ratings and Characteristics

Symbol

Characteristic

Min. Typ. Max. Units

Test Condition

Continuous Source Current -- --

Modified MOSFET Symbol

○D

IS (Body Diode)

--

-- -2.0

A

Showing the Integral Reverse

P-N Junction Rectifier

─ ││ ○

││

┘ │─ ─ ││││─│▶ ▼──

│ G

○S

-- --

VSD Diode Forward Voltage ② -- -- -1.2 V TA=25℃,IS=-2.0A,VGS=0V

trr Reverse Recovery Time ② -- 100 -- ns TA=25℃,IF=-2.0A,diF/dt=100A/μs

Notes ;

① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

② Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2%

③ Essentially Independent of Operating Temperature

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