SSD2011A 데이터 시트보기 (PDF) - Fairchild Semiconductor
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SSD2011A Datasheet PDF : 5 Pages
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SSD2011A
Fig 7. Breakdown Vltage vs. Temperature
1.4
Dual P-CHANNEL
POWER MOSFET
Fig 8. On-Resistance vs. Temperature
2.0
1.2
1.6
1.0
1.2
ID = -250 µA
0.8
0.8
VGS = -10 V
ID = -2 A
0.6
-50
0
50
100
150
TJ , Junction Temperature [oC]
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [oC]
Fig 9. Nomalized Effective Transient Thermal Impedance, Junction-to-Ambient
1
Duty Cycle=0.5
0.2
0.1
0.1
0.05
0.02
0.01
10- 5
Single Pulse
P
DM
t
1
@ Notes :
t2
1. Rθ JA(t)=62.5 oC/W Max.
2. Duty Factor, D=t1/t2
3.
TJ
M
-TA
=PD
M
*Z
θ
J
A
(t)
4. Surface Mounted
10- 4
10- 3
10- 2
10- 1
100
t1 , Square Wave Pulse Duration [sec]
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