OM7809/BGU6102/FM50,598 데이터 시트보기 (PDF) - NXP Semiconductors.

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OM7809/BGU6102/FM50,598

Wideband silicon low-noise amplifier MMIC

NXP Semiconductors. 

NXP Semiconductors

BGU6102

Wideband silicon low-noise amplifier MMIC

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

VCC

ICC(tot)

Tstg

Tj

VESD

supply voltage

RF input AC coupled

total supply current

storage temperature

VCC = 5.0 V

junction temperature

electrostatic discharge Human Body Model (HBM);

voltage

According JEDEC standard 22-A114E

all pins

pin 3

Charged Device Model (CDM);

According JEDEC standard 22-C101B

Min Max Unit

- 5.5 V

- 40 mA

55 +150 C

- 150 C

- 2000 V

- 3000 V

- 500 V

6. Thermal characteristics

Table 6.

Symbol

Rth(j-sp)

Thermal characteristics

Parameter

thermal resistance from junction to solder point

Conditions

Typ Unit

110 K/W

7. Static characteristics

Table 7. Static characteristics

Symbol Parameter

Conditions

VCC

ICC(tot)

Tamb

supply voltage

total supply current

ambient temperature

RF input AC coupled

configurable with external resistor

VENABLE  0.4 V

[1] ICC(tot) = ICC + IRF_OUT + IR_BIAS.

Min Typ Max

1.5 - 5.0

[1] 2.1 - 21

[1] - - 0.01

40 +25 +85

Unit

V

mA

mA

C

BGU6102

Preliminary data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 1 — 21 September 2011

© NXP B.V. 2011. All rights reserved.

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