FQD2N80TF 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FQD2N80TF Datasheet PDF : 9 Pages
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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
800 --
∆BVDSS Breakdown Voltage Temperature
/ ∆TJ Coefficient
ID = 250 µA, Referenced to 25°C --
0.9
IDSS
Zero Gate Voltage Drain Current
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125°C
--
--
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
3.0 --
VGS = 10 V, ID = 0.9 A
-- 4.9
VDS = 50 V, ID = 0.9 A (Note 4) --
2.4
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 425
--
45
-- 5.5
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 400 V, ID = 2.4 A,
RG = 25 Ω
--
12
--
30
--
25
(Note 4, 5)
--
28
VDS = 640 V, ID = 2.4 A,
--
12
VGS = 10 V
-- 2.6
(Note 4, 5) --
6.0
Max Unit
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
5.0
V
6.3
Ω
--
S
550
pF
60
pF
7.0
pF
35
ns
70
ns
60
ns
65
ns
15
nC
--
nC
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
1.8
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
7.2
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.8 A
--
--
1.4
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 2.4 A,
-- 480
--
ns
dIF / dt = 100 A/µs
(Note 4)
--
2.0
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 105mH, IAS = 1.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 2.4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2009 Fairchild Semiconductor Coporation
FQD2N80 / FQU2N80 Rev. C0
www.fairchildsemi.com
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