GP10AHE3/54 데이터 시트보기 (PDF) - Vishay Semiconductors
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GP10AHE3/54 Datasheet PDF : 3 Pages
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GP10x
Vishay General Semiconductor
100
TJ = 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
10
1
0.1
0.01
0.6
GP10A thru GP10J
GP10K thru GP10Q
GP10T thru GP10Y
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
GP10A................. 50 V
GP10B............... 100 V
GP10D.............. 200 V
GP10G.............. 400 V
GP10J............... 600 V
GP10K............... 800 V
GP10M.............1000 V
GP10N............. 1100 V
GP10Q............. 1200 V
GP10T..............1300 V
GP10V............. 1400 V
GP10W............ 1500 V
GP10Y............. 1600 V
Fig. 5 - Maximum Repetitive Peak Reverse Voltage, VRRM
10
TJ = 125 °C
1
TJ = 75 °C
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.1
10
0.01
TJ = 25 °C
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
GP10A thru GP10J
GP10K thru GP10Q
GP10T thru GP10Y
1
0.1
1
10
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-204AL (DO-41)
0.107 (2.7)
0.080 (2.0)
DIA.
1.0 (25.4)
MIN.
0.205 (5.2)
0.160 (4.1)
0.034 (0.86)
0.028 (0.71)
Note
DIA.
•
Lead
diameter
is
0.026
0.023
(0.66)
(0.58)
for
suffix
“E”
part
numbers
1.0 (25.4)
MIN.
Revision: 11-Dec-13
3
Document Number: 88637
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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