R3612 데이터 시트보기 (PDF) - Power Innovations
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R3612 Datasheet PDF : 16 Pages
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R3612
PROGRAMMABLE OVERVOLTAGE PROTECTOR
FOR ERICSSON COMPONENTS 3357/3 DCLIC
DECEMBER 1995 - REVISED SEPTEMBER 1997
On-State Current, IT
The current through the device in the on-state condition.
Forward Voltage, VF
The voltage across the device in the forward conducting state at a specified current IF.
Forward Current, IF
The current through the device in the forward conducting state.
thermal characteristics
Temperature Derating
Derating with temperature above a specified base temperature, expressed as a percentage, such as may be
applied to peak pulse current.
Thermal Resistance, RθJL, RθJC, RθJA
The effective temperature rise per unit power dissipation of a designated junction, above the temperature of a
stated external reference point (lead, case, or ambient) under conditions of thermal equilibrium.
Transient thermal impedance, ZθJL(t), ZθJC(t), ZθJA(t)
The change in the difference between the virtual junction temperature and the temperature of a specified
reference point or region (lead, case, or ambient) at the end of a time interval divided by the step function
change in power dissipation at the beginning of the same time interval which causes the change of
temperature-difference.
NOTE - It is the thermal impedance of the junction under conditions of change and is generally given in the
form of a curve as a function of the duration of an applied pulse.
(Virtual-)Junction Temperature, TJ
A theoretical temperature representing the temperature of the junction(s) calculated on the basis of a
simplified model of the thermal and electrical behaviour of the device.
Maximum Junction Temperature, TJM
The maximum value of permissible junction temperature, due to self heating, which a TSS can withstand
without degradation.
gate terminal parameters
Gate Trigger Current, IGT
The lowest gate current required to switch a device from the off state to the on state.
Gate Trigger Voltage, VGT
The gate voltage required to produce the gate trigger current, IGT.
Gate-to-Adjacent Terminal Peak Off-State Voltage, VGDM
The maximum gate to cathode voltage for a p-gate device or gate to anode voltage for an n-gate device that
may be applied such that a specified off-state current, ID, at a rated off-state voltage, VD, is not exceeded.
Peak Off-State Gate Current, IGDM
The maximum gate current that results from the application of the peak off-state gate voltage, VGDM.
Gate Reverse Current, Adjacent Terminal Open, IGAO , IGKO
The current through the gate terminal when a specified gate bias voltage, VG, is applied and the cathode
terminal for a p-gate device or anode terminal for an n-gate device is open circuited.
PRODUCT INFORMATION
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