06N80C3(2008_04) 데이터 시트보기 (PDF) - Infineon Technologies

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06N80C3
(Rev.:2008_04)

Cool MOS™ Power Transistor

Infineon Technologies 

SPD06N80C3

Maximum Ratings

Parameter

Drain Source voltage slope

VDS = 640 V, ID = 6 A, Tj = 125 °C

Thermal Characteristics

Parameter

Thermal resistance, junction - case

Thermal resistance, junction - ambient, leaded

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 2)

Soldering temperature, reflow soldering, MSL3

1.6 mm (0.063 in.) from case for 10s 3)

Symbol

dv/dt

Value

50

Unit

V/ns

Symbol

RthJC

RthJA

RthJA

Tsold

Values

Unit

min. typ. max.

-

-

1.5 K/W

-

-

62

-

-

75

-

-

50

-

- 260 °C

Electrical Characteristics

Parameter

Symbol Conditions

Values

Unit

min. typ. max.

Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 800

-

Drain-Source avalanche

V(BR)DS VGS=0V, ID=6A

- 870

breakdown voltage

-V

-

Gate threshold voltage

Zero gate voltage drain current

VGS(th) ID=250µΑ, VGS=VDS 2.1

IDSS

VDS=800V, VGS=0V,

Tj=25°C,

-

Tj=150°C

-

3

3.9

µA

0.5 10

- 100

Gate-source leakage current

IGSS

VGS=20V, VDS=0V

-

- 100 nA

Drain-source on-state resistance RDS(on) VGS=10V, ID=3.8A,

Ω

Tj=25°C

- 0.78 0.9

Tj=150°C

-

2.1

-

Gate input resistance

RG

f=1MHz, open Drain

-

0.7

-

Rev. 2.4

Page 2

2008-04-11

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