1N4531 데이터 시트보기 (PDF) - NXP Semiconductors.
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1N4531 Datasheet PDF : 10 Pages
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NXP Semiconductors
High-speed diodes
Product data sheet
1N4531; 1N4532
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
IN4531
IN4532
Cd
diode capacitance
IN4531
IN4532
trr
reverse recovery time
IN4531
IN4532
reverse recovery time
IN4532
Vfr
forward recovery voltage
CONDITIONS
IF = 10 mA; see Fig.3
see Fig.5
VR = 20 V
VR = 20 V; Tj = 150 °C
VR = 50 V
VR = 50 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
when switched from IF = 10 mA to
IR = 60 mA; RL = 100 Ω; measured
at IR = 1 mA; see Fig.7
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured
at IR = 1 mA; see Fig.7
when switched from IF = 100 mA;
tr ≤ 30 ns; see Fig.8
MIN.
−
−
−
−
−
−
−
−
−
−
−
MAX. UNIT
1000 mV
25 nA
50 µA
100 nA
100 µA
4 pF
2 pF
4 ns
2 ns
4 ns
3V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point lead length 5 mm
thermal resistance from junction to ambient lead length 5 mm; note 1
Note
1. Device mounted on a printed circuit-board without metallization pad.
VALUE
120
350
UNIT
K/W
K/W
1996 Sep 03
3
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