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1N5400 데이터 시트보기 (PDF) - General Semiconductor

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1N5400
GE
General Semiconductor GE
1N5400 Datasheet PDF : 2 Pages
1 2
RATINGS AND CHARACTERISTIC CURVES 1N5400 THRU 1N5408
FIG.1 - FORWARD CURRENT DERATING CURVE
8.0
7.0
L=0.31” (0.79mm)
6.0
5.0
4.0
L=0.50” (12.7 mm)
3.0
L=0.25” (6.3 mm)
TL=LEAD TEMPERATURE
with BOTH LEADS HEAT
SINK MOUNTED with
LENGTH (L) AS SHOWN
60 Hz RESISTIVE OR
INDUCTIVE LOAD
2.0
TA=AMBIENT TEMPERATURE
1.0 0.375” (9.5mm) LEAD LENGTH
P.C. B. MOUNTING
0
40
60
80
100
120
140
160
180
TEMPERATURE, °C
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
400
8.3ms SINGLE HALF SINE WAVE
(JEDEC Method)
TL=105°C
1.0 CYCLE
100
40
1.0
10
100
NUMBER OF CYCLES AT 60 HZ
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
100
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
100
10
TJ=25°C
PULSE WIDTH=300µs
1% DUTY CYCLE
1
0.1
0.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
100
70
TJ=25°C
f=1.0 MHz
Vsig=50mVp-p
10
1
0.1
1
10
100
REVERSE VOLTAGE, VOLTS
10
TJ=150°C
1
TJ=100°C
0.1
0.01
0
TJ=25°C
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE
VOLTAGE,%
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
0.01
0.1
1
10
100
t, PULSE DURATION, sec.

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