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2N2857 데이터 시트보기 (PDF) - Advanced Power Technology
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2N2857
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Advanced Power Technology
2N2857 Datasheet PDF : 4 Pages
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2N2857
Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 12 mA
f
(MHz)
100
200
300
400
500
600
700
800
900
1000
S11
|S11|
0.457
0.291
0.233
0.212
0.184
0.173
0.192
0.165
0.261
0.083
∠φ
-44
-56
-60
-68
-76
-79
-89
-96
-121
149
S21
|S21|
12.49
8.06
5.3
3.88
3.36
2.97
2.39
1.89
2.72
1.27
∠φ
122
101
89
80
80
69
61
57
60
39
S12
|S12|
0.012
0.018
0.024
0.032
0.037
0.043
0.044
0.055
0.068
0.064
∠φ
63
55
81
55
49
46
44
43
29
18
S22
|S22|
∠φ
0.823
-23
0.712
-35
0.728
-46
0.723
-60
0.711
-73
0.717
-86
0.72
-100
0.731
-115
0.746
-131
0.749
-148
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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