2N2857 데이터 시트보기 (PDF) - Unspecified
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2N2857 Datasheet PDF : 4 Pages
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Bipolar Low Noise Transistors
Absolute Maximum Ratings
2N2857 Series
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Operating Temperature
Storage Temperature
Chip or Ceramic Packages
Plastic Packages
Total Power Dissipation at 25°C
509 Case Style
VCBO
VCEO
VEBO
IC
Tj
30 V
15 V
1.5 V
50 mA
200°C
-65°C to +200°C
-65°C to +125°C
450 mW
Electrical Specifications @ 25°C
2N2857 Series
Parameter of Test
Gain Bandwidth Product
Small Signal Power Gain
Noise Figure
50 Ohms
Magnitude of small
Signal short-circuit
Transfer ratio
Low frequency small
Signal current transfer
ratio
Condition
VCE = 10 volts
IC = 8 mA
VCE = 6 volts
IC = 1.5 mA
f = 450 MHz
VCE = 6 volts
IC = 1.5 mA
f = 450 GHz
VCE = 6 volts
IC = 5 mA
f = 100 MHz
VCE = 6 volts
IC = 2 mA
f = 1 KHz
Collector to base
Feedback capacitance
VCE = 6 volts
Symbol
fT
GPE
NF
|hfe|
hfe
CCB
Collector base time
constant
VCE = 6 volts
IC = 2 mA
f = 1 KHz
rb’ Cc
Units
GHz
dB
dB
pf
psec
2N2857
509 pkg
1.8 typ
12.5 – 21.0
4.5 Max.
10 - 19
50 - 220
1.0 Max.
4 - 15
2N2857
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
2
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
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