2N4403 데이터 시트보기 (PDF) - General Semiconductor
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2N4403 Datasheet PDF : 3 Pages
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2N4403
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
Collector-Base Breakdown Voltage
at ÐIC = 0.1 mA, IE = 0
Collector-Emitter Breakdown Voltage(1)
at ÐIC = 1 mA, IB = 0
Emitter-Base Breakdown Voltage
at ÐIE = 0.1 mA, IC = 0
Collector-Emitter Saturation Voltage(1)
at ÐIC = 150 mA, ÐIB = 15 mA
at ÐIC = 500 mA, ÐIB = 50 mA
Base-Emitter Saturation Voltage(1)
at ÐIC = 150 mA, ÐIB = 15 mA
at ÐIC = 500 mA, ÐIB = 50 mA
Collector Cutoff Current
at ÐVEB = 0.4 V, ÐVCE = 35 V
Base Cutoff Current
at ÐVEB = 0.4 V, ÐVCE = 35 V
DC Current Gain
at ÐVCE = 1 V, ÐIC = 0.1 mA
at ÐVCE = 1 V, ÐIC = 1 mA
at ÐVCE = 1 V, ÐIC = 10 mA
at ÐVCE = 2 V, ÐIC = 150 mA(1)
at ÐVCE = 2 V, ÐIC = 500 mA(1)
Input Impedance
at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHZ
Voltage Feedback Ratio
at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHZ
Current Gain-Bandwidth Product
at ÐVCE = 10 V, ÐIC = 20 mA, f = 100 MHZ
Collector-Base Capacitance
at ÐVCB = 10 V, IE=0, f = 1.0 MHZ
Emitter-Base Capacitance
at ÐVEB = 0.5 V, IC=0, f = 1.0 MHZ
SYMBOL
ÐV(BR)CBO
MIN.
40
ÐV(BR)CEO
40
ÐV(BR)EBO
5.0
ÐVCEsat
ÐVCEsat
ÐVBEsat
ÐVBEsat
ÐICEX
ÐIBEV
hFE
hFE
hFE
hFE
hFE
hie
hre
fT
CCB
CEB
Ð
Ð
0.75
Ð
Ð
Ð
30
60
100
100
20
1.5
0.1 á 10Ð4
200
Ð
Ð
NOTES
(1) Pulse test: Pulse width ² 300ms - Duty cycle ² 2%
.MAX.
Ð
Ð
Ð
0.40
0.75
0.95
1.30
100
100
Ð
Ð
Ð
300
Ð
15
8 á 10Ð4
Ð
8.5
30
UNIT
Volts
Volts
Volts
Volts
Volts
Volts
Volts
nA
nA
Ð
Ð
Ð
Ð
Ð
kW
Ð
MHz
pF
pF
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