2N5401 데이터 시트보기 (PDF) - Daya Electric Group Co., Ltd.

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2N5401

TO-92 Plastic-Encapsulate Transistors

Daya Electric Group Co., Ltd. 

TO-92 Plastic-Encapsulate Transistors

2N5401 TRANSISTOR (PNP)

FEATURE

z Switching and amplification in high voltage

z Applications such as telephony

z Low current(max. 600mA)

z High voltage(max.160v)

TO-92

1.EMITTER

2.BASE

3.COLLECTOR

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

-160

-150

-5

-0.6

0.625

150

-55-150

Units

V

V

V

A

W

℃

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

123

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE(1)

hFE(2)

hFE(3)

VCE(sat)

VBE(sat)

fT

Test conditions

IC= -100μA, IE=0

IC= -1mA, IB=0

IE= -10μA, IC=0

VCB= -120 V, IE=0

VEB= -3V, IC=0

VCE= -5V, IC=-1 mA

VCE= -5V, IC= -10 mA

VCE= -5V, IC=-50 mA

IC= -50mA, IB= -5 mA

IC= -50mA, IB= -5 mA

VCE=-5V, IC=-10mA

f =30MHz

MIN

-160

-150

-5

80

60

50

100

TYP MAX

-50

-50

240

-0.5

-1

300

UNIT

V

V

V

nA

nA

V

V

MHz

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