2N6420 데이터 시트보기 (PDF) - Inchange Semiconductor

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2N6420

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2N6420

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB= 0

-175

V

VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.125A

VBE(on) Base-Emitter On Voltage

IC= -1A ; VCE= -10V

ICEO

Collector Cutoff Current

ICEX

Collector Cutoff Current

IEBO

Emitter Cutoff Current

VCE= -150V; IB= 0

VCE= -225V; VBE(off)= -1.5V

VCE= -225V; VBE(off)= -1.5V,TC=150℃

VEB= -6V; IC= 0

hFE-1

DC Current Gain

IC= -0.1A ; VCE= -10V

hFE-2

DC Current Gain

IC= -0.5A ; VCE= -10V

hFE-3

DC Current Gain

IC= -1A ; VCE= -10V

-5.0

V

-1.4

V

-10

mA

-1.0

-3.0

mA

-5.0

mA

40

40

200

10

isc Website：www.iscsemi.cn

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