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2SA1048-GR 데이터 시트보기 (PDF) - Toshiba

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2SA1048-GR Datasheet PDF : 3 Pages
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1048
2SA1048
Audio Frequency Amplifier Applications
Unit: mm
Small package
High voltage: VCEO = 50 V (min)
High hFE: hFE = 70~400
Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SC2458
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
50
V
50
V
5
V
150
mA
50
mA
200
mW
125
°C
55~125
°C
JEDEC
JEITA
TOSHIBA
2-4E1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.13 g (typ.)
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods” ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
ICBO
VCB = −50 V, IE = 0
IEBO
VEB = −5 V, IC = 0
hFE
VCE = −6 V, IC = −2 mA
(Note)
VCE (sat) IC = −100 mA, IB = −10 mA
fT
VCE = −10 V, IC = −1 mA
Cob
VCB = −10 V, IE = 0, f = 1 MHz
NF
VCE = −6 V, IC = −0.1 mA, f = 1 kHz,
RG = 10 kΩ
Note: hFE classification O: 70~140, Y: 120~240, GR: 200~400
Min Typ. Max Unit
⎯ −0.1 μA
⎯ −0.1 μA
70
400
0.1 0.3
V
80
MHz
4
7
pF
1.0
10
dB
1
2007-11-01

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