2SA1774 데이터 시트보기 (PDF) - ON Semiconductor
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2SA1774 Datasheet PDF : 4 Pages
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2SA1774
PNP Silicon General
Purpose Amplifier Transistor
This PNP transistor is designed for general purpose amplifier
applications. This device is housed in the SC−75/SOT−416/SC−90
package which is designed for low power surface mount
applications, where board space is at a premium.
Features
• Reduces Board Space
• High hFE, 210−460 (typical)
• Low VCE(sat), < 0.5 V
• Available in 8 mm, 7−inch/3000 Unit Tape and Reel
• Pb−Free Packages are Available*
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
−60
−50
−6.0
−100
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation (Note 1)
PD
150
mW
Junction Temperature
TJ
150
°C
Storage Temperature Range
Tstg
−55 ~ + 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR−4 glass epoxy printed circuit board using the
minimum recommended footprint.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
12
SC−75
CASE 463−01
STYLE 1
MARKING DIAGRAM
F9 M G
G
1
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
May, 2006 − Rev. 6
F9 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
2SA1774/D
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