A940 데이터 시트보기 (PDF) - Thinki Semiconductor Co., Ltd.

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A940

NPN Silicon Epitaxial Power Transistor

Thinki Semiconductor Co., Ltd. 

2SC2073

®

ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.

Parameter

Symbol Test conditions MIN TYP MAX UNIT

Collector-base Breakdown Voltage V (BR) CBO IC=100μA,IE=0

150

V

Collector-emitter Breakdown Voltage V (BR) CEO IC=1mA,IB=0

150

V

Emitter-base Breakdown Voltage

V (BR) EBO IE=100μA,IC=0

5

V

Collector Cut-off Current

ICBO

VCB=120V,IE=0

10

μA

Emitter Cut-off Current

IEBO

VEB=5V,IC=0

10

μA

DC Current Gain

hFE

VCE=10V,IC=0.5A

40

75

140

Collector-emitter Saturation Voltage VCE(sat)

IC=0.5A, IB=50mA

1.5

V

Base-emitter on Voltage

Transition Frequency

Collector Output Capacitance

VBE(on)

fT

Cob

VCE=10V ,IC=0.5A 0.65

0.85

V

VCE=10V, IC=0.5A

4

VCB=10V,IE=0,

f=1MHz

35

MHz

pF

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

© 2006 Thinki Semiconductor Co.,Ltd.

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