2SB1188 데이터 시트보기 (PDF) - Unisonic Technologies

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2SB1188

MEDIUM POWER LOW VOLTAGE TRANSISTOR

Unisonic Technologies 

2SB1188

PNP SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PARAMETER

SYMBOL

RATINGS

Collector -Base Voltage

VCBO

-40

Collector -Emitter Voltage

VCEO

-30

Emitter -Base Voltage

VEBO

-5

Peak Collector Current

ICM

-7

DC Collector Current

IC

-3

Base Current

IB

-0.6

Power Dissipation

PD

0.5

Junction Temperature

TJ

+150

Storage Temperature

TSTG

-40~+150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

UNIT

V

V

V

A

A

A

W

°C

°C

„ ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

Collector Base Breakdown Voltage

BVCBO

Collector Emitter Breakdown Voltage BVCEO

Emitter Base Breakdown Voltage

BVEBO

Collector Cut-Off Current

ICBO

Emitter Cut-Off Current

IEBO

DC Current Gain(Note)

hFE1

hFE2

Collector-Emitter Saturation Voltage VCE(SAT)

Base-Emitter Saturation Voltage

VBE(SAT)

Current Gain Bandwidth Product

fT

Output Capacitance

Cob

Note: Pulse test: PW<300μs, Duty Cycle<2%

IC= -50μA

IC= -1mA

IE=-50μA

VCB=-30V,IE=0

VEB=-4V,IC=0

VCE=-2V,Ic=-20mA

VCE=-2V,Ic=-1A

Ic=-2A,IB=-0.2A

Ic=-2A,IB=-0.2A

VCE=-5V,Ic=-0.1A

VCB=-10V,IE=0,f=1MHz

„ CLASSIFICATION OF hFE2

RANK

RANGE

Q

100 ~ 200

P

160 ~ 320

MIN TYP MAX UNIT

-40

V

-30

V

-5

V

-1

μA

-1

μA

30 200

100 150 400

-0.3 -0.5

V

-1.0 -2.0

V

80

MHz

45

pF

E

200 ~ 400

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R208-041.B

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