2SB1188 데이터 시트보기 (PDF) - Willas Electronic Corp.
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2SB1188 Datasheet PDF : 3 Pages
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WILLAS
S1.0OA TSU-8RF9ACPElMaOsUtNicT -SECHnOcTaTKpYsBuARlaRtIEeR TRErCaTnIFsIEiRsSto-20rVs- 200V
FM120-M+
THRU
2SB1F18M81200-M+
SOD-123+ PACKAGE
Static Characteristic
-0.7
Features
COMMON EMITTER
T =25℃
a
• Ba-0t.6ch process design, excellent power dissi-p2.a0mtiAon offers
better reverse leakage current and thermal resistance.
-1.8mA
• Lo-0w.5 profile surface mounted application in order to
-1.6mA
optimize board space.
h —— I
FE
C
1000 Package outline
T =100℃
a
SOD-123H
T =25℃
a
• Lo-0w.4 power loss, high efficiency.
-1.4mA
• High current capability, low forward voltage -d1.r2ompA.
100
-0.3
• High surge capability.
-1.0mA
0.146(3.7)
0.130(3.3)
Pb Free Product
0.012(0.3) Typ.
• Gu-0.a2 rdring for overvoltage protection.
• Ultra high-speed switching.
-0.8mA
-0.6mA
• Si-l0i.1con epitaxial planar chip, metal silicon jun-0c.4tmioAn.
• Lead-free parts meet environmental standarIBd=s-0.o2mf A
M-I0L.0-STD-19500 /228
-0
-1
-2
-3
-4
-5
-6
• RoHS productCfOoLrLpECaTcOkRin-EgMcIToTdERe VsOuLfTfiAxG"EG"V (V)
CE
Halogen free product for packing code suffix "H"
10
-5
-10
0.071(1.8)
0.056(1.4)
COMMON EMITTER
V = -3V
CE
-100
COLLECTOR CURRENT I (mA)
C
-1000
-2000
Mechanical
data V
CEsat
——
-1000
I
C
• Epoxy : UL94-V0 rated flame retardant
-2000
V ——
BEsat
I
C
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
-1000
• Terminals :Plated terminals, solderable per MIL-STD-750
-100
Method 2026
0.031(0.8) Typ.
T =25℃
a
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
• Mounting Position : ATan=1y00 ℃
DimTen=s1i0o0n℃s in inches and (millimeters)
a
• We-10ight : Approximated 0.011 gram
T =25℃
MAXIMUM RaATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specβi=f1ie0d.
Single phase-1-1half wave, 60H-1z0, resistive of in-1d00uctive load. -1000 -2000
For capacitive load, deraCteOLcLuErCrTeOnRt CbUyR2R0E%MT
I
C
(mA)
-100
-0.1
-1
-10
-100
COLLECTOR CURREMT I (mA)
C
β=10
-1000 -2000
Marking Co-d20e00
-1000
RATINGS I ——
C
V
BE
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum D-C100Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL FM120-MH FM130-MH FM140-MH FM150-CMoHb/CFiMb 16—0-—MH FVMC1B8/V0E-MB H FM1100-MH FM1150-MH FM1200-MH UNIT
12
13 300 14
15
16
18
10f=1MHz 115
120
VRRM
20
VRMS
14
30
40
21 100 28
50
C
ib
60
35
42
80
10IE0=0/IC=0 150
200 Volts
T =25 ℃
56
70a
105
140 Volts
VDC
20
30
40
50 C 60
ob
80
100
150
200 Volts
IO
1.0
Amps
Peak Forward-1S0 urge Current 8.3 ms single half sine-wave IFSM
10
30
superimposed on rated load (JEDEC method)
Amps
Typical Thermal Resistance (Note 2)
-1
Typical Junction Capacitance (Note 1)
RΘJA
CJ
40
℃/W
120
PF
Operating Temperature Range
CVOM= M-3OVNTJEMITTER
-55 to +125
-55 to +150
℃
Storage Tem-0p.1erature Range
CE
TSTG
1
- 65 to +175
℃
-0
-200
-400
-600
-800
-1000
-1200
-0.1
-1
-10
-20
BASE-EMMITER VOLTAGE V (mV)
BE
REVERSE VOLTAGE V (V)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DPCC
——
T
a
600
Maximum Average Reverse Current at @T A=25℃
Rated DC Bl5o0c0king Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50
0.70
0.85
0.9
0.92 Volts
IR
0.5
mAmp
10
NOTES:
400
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
300
200
100
0
0
2012-06
2012-0
25
50
75
100
125
150
AMBIENT TEMPERATURE T (℃)
a
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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