2SB1261-Z 데이터 시트보기 (PDF) - TY Semiconductor

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2SB1261-Z

PNP SILICON EPITAXIAL TRANSISTOR MP-3

TY Semiconductor 

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

DC current gain *

Collector saturation voltage *

Base saturation voltage *

Gain bandwidth product

Output capacitance

Turn-on time

Storage time

Fall time

* Pulsed: PW 350 ìs, duty cycle 2%

Product specification

2SB1261-Z

Symbol

Testconditons

ICBO VCB = -60 V, IE = 0

IEBO VEB = -7.0 V, IC = 0

VCE = -2.0 V, IC = -0.6A

hFE

VCE = -2.0 V, IC = -2A

VCE(sat) IC = -1.5A, IB = -0.15A

VBE(sat) IC = -1.5A, IB = -0.15A

fT VCE = -5.0 V, IE = 1.5A

Cob VCB = -10 V, IE = 0 , f = 1.0 MHz

ton

IC = -1.0 A,IB1 = -IB2 = -0.1 A, VCC = -

tstg 10 V, RL=10Ù

tf

Min Typ Max Unit

-10 ìA

-10 ìA

100

400

50

-0.2 -0.3 V

-0.94 -1.2 V

50

MHz

40

pF

0.15 0.5 ìs

0.5 2.0 ìs

0.1 0.5 ìs

hFE Classification

Rank

hFE

M

100 200

L

160 320

K

200 400

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sales@twtysemi.com

4008-318-123

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